RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82302 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82302 was designed for Class C Amplifier/Oscillato

文件：52.58 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82304 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82304 was designed for Class C Amplifier/Oscillato

文件：53.55 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82306 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overaly die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82306 was designed for Class C Amplifier/Oscillato

文件：54.54 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82307 was designed for Class C amplifier/oscillato

文件：51.44 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

丝印：83301；Package：.2502LFL(S010)；RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated condi

文件：96.2 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

丝印：83303；Package：.2502LFL(S010)；RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated condi

文件：93.34 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.

文件：123.05 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

NPN RF TRANSISTOR

DESCRIPTION: The ASI MSC85623is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for RF Amplifier and Oscillator Applications up to 3.0 GHz.

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ASI

HIGH POWER GaAs FET

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ASI

HIGH POWER GaAs FET

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ASI