RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.

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STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

ST

意法半导体

Electronic, 1 C #22 Str SPC, TFE Ins, OA SPC Brd, TFE Tape Jkt,MIL-W-16878/4 (Type E)

Product Description High Temperature Electronic, 1 Conductor 22AWG (19x34) Silver Plated Copper, TFE Insulation, Overall Silver Plated Copper Braid(85) Shield, TFE Tape Outer Jacket, MIL-W-16878/4 (Type E)

文件：177.19 Kbytes 页数：2 Pages

BELDEN

百通

SMD

COILCRAFT/线艺

上传：深圳市俊睿芯城半导体科技有限公司

SMD

COILCRAFT/线艺

上传：深圳市俊睿芯城半导体科技有限公司