RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA

文件：108.9 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA

文件：109.74 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The MSC80195 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA

文件：108.33 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC80196 is Designed for Class A Linear Applications up to 2.0 GHz. FEATURES: • Class A Operation • PG = 7.0 dB at 1.0 W/2.0 GHz • Omnigold™ Metalization System

文件：18.79 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The MSC80196 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA

文件：108.9 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The MSC80197 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA

文件：123.47 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

NPN RF TRANSISTOR

DESCRIPTION: The ASI MSC80213 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for general purpose Applications up to 2.3 GHz. FEATURES: • Hermetically Sealed Package • Gold Metallization

文件：25.53 Kbytes 页数：2 Pages

ASI

NPN RF TRANSISTOR

DESCRIPTION: The ASI MSC80278 is a Silicon NPN Microwave Transistor Supplied in a Common Emitter Package, Designed for linear Applications. FEATURES: • Emitter Ballasted • Gold Metallization • Hermetically sealed Package

文件：21.77 Kbytes 页数：1 Pages

ASI

NPN SILICON RF MICROWAVE TRANSISTOR

DESCRIPTION: The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. FEATURES INCLUDE: • Omnigold™ Metalization System • POUT 4.0 W Min. • GP = 10 dB

文件：78.59 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC81002 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The

文件：101.87 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体