RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC81005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

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STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC81010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MS

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STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC81020 is a common base hermetically sealed silicon NPN microwave tranisitor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. . EMI

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STMICROELECTRONICS

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RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein.

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STMICROELECTRONICS

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. FEATURES: • Input matching • Emitter site Ballasted. • PG = 10 dB at 35 W/1150 MHz • Omnigold™ Metalization System

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ASI

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035MP. MSC81035MP of fers improved saturated ouput power and collector efficiency based on the test circuit described he

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STMICROELECTRONICS

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81058 is Designed for General Purpose Class C Power Amplifier Applications up to 1.2 GHz. FEATURES: • PG= 10 dB min. at 10 W/ 1.0 GHz • Hermetic Microstrip Package • Omnigold™ Metalization System • Emitter Ballasted

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ASI

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC81058 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MS

文件：101.98 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz. FEATURES: • PG = 10 dB min. at 2.0 W/ 1.0 GHz • Hermetically sealed Package • Omnigold™ Metalization System • Emitter Ballasted

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ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MSC81111 is Designed for Class C Amplifier Applicatioons from 0.4 to 1.2 GHz, Supplied in Common Base Package.

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ASI