NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MSC81111 is Designed for Class C Amplifier Applicatioons from 0.4 to 1.2 GHz, Supplied in Common Base Package.

文件：17.4 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC81111 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

文件：100.69 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

High Speed Digital Controller

文件：280.39 Kbytes 页数：28 Pages

ONSEMI

安森美半导体

High Speed Digital Controller

文件：280.39 Kbytes 页数：28 Pages

ONSEMI

安森美半导体

High Speed Digital Controller

文件：280.39 Kbytes 页数：28 Pages

ONSEMI

安森美半导体