RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81400M Super Power transistor is a high peak pulse power device specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 25:1 load mismatch condition at any phase angle under full rated conditions. The MSC81400M is housed in

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RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS

DESCRIPTION The MSC81402 is a 28 Volt, Class C, common base NPN biploar device designed for general purpose amplifier applications in the UHF and L-Band frequency range. High gain and collector efficiency along with extreme ruggedness are obtained using a gold metallized emitter-ballasted overla

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RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82001 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC82003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 3 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

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ASI

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82003 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC82005 is Designed for General Purpose Class C Power Amplifier Applications up to 2000 MHz. FEATURES: • PG = 7.0 dB min. at 5W/ 2,000 MHz • Common Base • Hermetic Microstrip Package • Omnigold™ Metalization System

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ASI

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

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RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

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RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The MSC82040 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB

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RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB

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