MSC82003技术资料参数供应商报价意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MSC82003	文件：60.74 Kbytes Page：2 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC82003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 3 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System 文件：60.74 Kbytes 页数：2 Pages	ASI	ASI
MSC82003	文件：92.05 Kbytes Page：5 Pages	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS DESCRIPTION The MSC82003 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. 文件：92.05 Kbytes 页数：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MSC82003	文件：300 bytes Page：1 Pages	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS	ST 意法半导体	ST
MSC82003	文件：300 bytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR	ASI Semiconductor	ASI Semiconductor

更多MSC82003供应商更新时间2025-10-6 10:34:00