NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC82005 is Designed for General Purpose Class C Power Amplifier Applications up to 2000 MHz. FEATURES: • PG = 7.0 dB min. at 5W/ 2,000 MHz • Common Base • Hermetic Microstrip Package • Omnigold™ Metalization System

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ASI

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

文件：84.92 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

ST

意法半导体