NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. FEATURES: • Input matching • Emitter site Ballasted. • PG = 10 dB at 35 W/1150 MHz • Omnigold™ Metalization System

文件：18.86 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein.

文件：60.42 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035MP. MSC81035MP of fers improved saturated ouput power and collector efficiency based on the test circuit described he

文件：57.47 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

ST

意法半导体

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

ST

意法半导体