MSC81250M中文资料下载市场行情意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MSC81250M	文件：39.27 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz. FEATURES: • Internal Input/Output Matching Networks • PG = 6.2 dB at 250 W/1150 MHz • Omnigold™ Metalization System 文件：39.27 Kbytes 页数：1 Pages	ASI	ASI
MSC81250M	文件：77.23 Kbytes Page：5 Pages	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. ■ REFRACTORYGOLD METALLIZATION ■ RUGGEDIZED VSWR 20:1 ■ INTERNAL INPUT/OUTPUT MATCHING ■ LOW THERMAL RESISTANCE ■ METAL/CERAMIC HERMETIC PACKAGE ■ POUT = 250 W 文件：77.23 Kbytes 页数：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MSC81250M	文件：300 bytes Page：1 Pages	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS	ST 意法半导体	ST
MSC81250M	文件：300 bytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR	ASI Semiconductor	ASI Semiconductor

更多MSC81250M供应商更新时间2025-12-12 10:31:00