NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz. FEATURES: • Internal Input/Output Matching Networks • PG = 6.2 dB at 250 W/1150 MHz • Omnigold™ Metalization System

文件：39.27 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81250M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. ■ REFRACTORYGOLD METALLIZATION ■ RUGGEDIZED VSWR 20:1 ■ INTERNAL INPUT/OUTPUT MATCHING ■ LOW THERMAL RESISTANCE ■ METAL/CERAMIC HERMETIC PACKAGE ■ POUT = 250 W

文件：77.23 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

ST

意法半导体

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor