NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz. FEATURES: • PG = 10 dB min. at 2.0 W/ 1.0 GHz • Hermetically sealed Package • Omnigold™ Metalization System • Emitter Ballasted

文件：116.75 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz.FEATURES:\n• PG = 10 dB min. at 2.0 W/ 1.0 GHz\n• Hermetically sealed Package\n• Omnigold™ Metalization System\n• Emitter Ballasted

ASI Semiconductor

IntelliFET HIGH-SIDE POWER SWITCH

Features Protection Functions  Reverse Battery Protection Using External Components  Voltage Dependent Current Limiting  Overtemperature Protection with Auto-Restart  Overvoltage Protection Including Load Dump  Stable Undervoltage Protection  ESD Protection  Loss of Ground Protectio

文件：1.41935 Mbytes 页数：31 Pages

DIODES

美台半导体

BGA

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市河锋鑫科技有限公司

BGA

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市河锋鑫科技有限公司