IntelliFET HIGH-SIDE POWER SWITCH

Features Protection Functions  Reverse Battery Protection Using External Components  Voltage Dependent Current Limiting  Overtemperature Protection with Auto-Restart  Overvoltage Protection Including Load Dump  Stable Undervoltage Protection  ESD Protection  Loss of Ground Protectio

文件：1.41935 Mbytes 页数：31 Pages

DIODES

美台半导体

丝印：ZXMS81090；Package：SO-8EP；IntelliFET HIGH-SIDE POWER SWITCH

Features Protection Functions  Reverse Battery Protection Using External Components  Voltage Dependent Current Limiting  Overtemperature Protection with Auto-Restart  Overvoltage Protection Including Load Dump  Stable Undervoltage Protection  ESD Protection  Loss of Ground Protectio

文件：1.41935 Mbytes 页数：31 Pages

DIODES

美台半导体

IntelliFET High-Side Power Switch

The ZXMS81090SPQ is a single-channel, high-side power switch in a SO-8EP (Type E) exposed heatsink package incorporating protective and diagnostic functions.\n\n The device comprises a monolithic n-channel vertical power MOSFET with integrated temperature and current sensors with a chargepumped

Diodes

美台半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz. FEATURES: • PG = 10 dB min. at 2.0 W/ 1.0 GHz • Hermetically sealed Package • Omnigold™ Metalization System • Emitter Ballasted

文件：116.75 Kbytes 页数：1 Pages

ASI