SILICON NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF260 is Designed for VHF Large Signal Power Amplifier Applications.

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ASI

SILICON NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF264 is Designed for Class C VHF Mobile Radio Power Amplifier Applications Operating at 12.5 Volts. FEATURES: • POUT = 30 W Min. @ 175 MHz • Gold Metalization • Economical TO-220 CE Package

文件：30.03 Kbytes 页数：1 Pages

ASI

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

文件：226.31 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

文件：226.31 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

文件：311.65 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

文件：311.65 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

文件：311.65 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

文件：299.22 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

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LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉