isc Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain -hFE = 30(Min)@ IC= -0.3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Complement to Type MJD41C • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

文件：183.39 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：278.21 Kbytes 页数：2 Pages

ISC

无锡固电

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“

文件：897.03 Kbytes 页数：2 Pages

JIANGSU

长电科技

Complementary Power Transistors

Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Monolithic Construction With Built?in Base ? Emitter Resistors ● Pb-Free Packages are Available

文件：46.76 Kbytes 页数：2 Pages

KEXIN

科信电子

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

文件：368.42 Kbytes 页数：1 Pages

TGS

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptiona Silicon PNP transistor in a TO-252 Plastic Package. Features Complement to MJD41C. Applications Medium power linear switching applications.

文件：828.26 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications.

文件：534.27 Kbytes 页数：5 Pages

FS

Complementary Power Transistors

Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect

文件：121.38 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：297.24 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：278.21 Kbytes 页数：2 Pages

ISC

无锡固电