Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：278.21 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A APPLICATIONS · General purpose amplifier · Low speed switching applications

文件：277.3 Kbytes 页数：2 Pages

ISC

无锡固电

DPAK

NEXPERIA/安世

上传：深圳市中赛美电子科技有限公司

TO-252

ON

上传：深圳市冠亿通科技有限公司

TO-252

ON

上传：深圳市勤思达科技有限公司