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MJD42CJ

100 V, 6 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear

文件:230.14 Kbytes 页数:11 Pages

NEXPERIA

安世

MJD42C-Q

丝印:MJD42CA;Package:DPAK;100 V, 6 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件:223.58 Kbytes 页数:10 Pages

NEXPERIA

安世

MJD42C-QJ

100 V, 6 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件:223.58 Kbytes 页数:10 Pages

NEXPERIA

安世

MJD42CRLG

Complementary Power Transistors

Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect

文件:121.38 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MJD42CT4G

Complementary Power Transistors

Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect

文件:121.38 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MJD42CTF

General Purpose Amplifier

General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C

文件:47.59 Kbytes 页数:5 Pages

FAIRCHILD

仙童半导体

MJD42C

Complementary Power Transistors

文件:78.58 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MJD42C

Complementary Power Transistors

文件:123.02 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MJD42C

SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS

文件:198.47 Kbytes 页数:6 Pages

MOTOROLA

摩托罗拉

MJD42C

isc Silicon PNP Power Transistors

文件:360.27 Kbytes 页数:3 Pages

ISC

无锡固电

晶体管资料

  • 型号:

    MJD42C

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

  • 性质:

    低频或音频放大 (LF)_功率放大 (PA)

  • 封装形式:

    贴片封装

  • 极限工作电压:

  • 最大电流允许值:

    6A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

    20W

  • 放大倍数:

  • 图片代号:

    G-217

  • vtest:

    0

  • htest:

    999900

  • atest:

    6

  • wtest:

    20

技术参数

  • Package name:

    DPAK

  • Size (mm):

    6.1 x 6.6 x 2.3

  • Polarity:

    PNP

  • Ptot (mW):

    15000

  • VCEO [max] (V):

    -100

  • IC [max] (mA):

    -6000

  • hFE [min]:

    30

  • Tj [max] (°C):

    150

  • fT [min] (MHz):

    3

  • Automotive qualified:

    N

供应商型号品牌批号封装库存备注价格
ST
22+
TO-252
6000
十年配单,只做原装
询价
ON/安森美
23+
TO-252
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON/安森美
23+
TO-252
18656
询价
ST/意法
22+
TO-252
98553
询价
ST
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ON/安森美
24+
TO-252
60000
询价
MOT
24+
SMD
5000
公司存货
询价
ON
24+/25+
2445
原装正品现货库存价优
询价
ON
23+
TO-252
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
ON
17+
TO-252
6200
100%原装正品现货
询价
更多MJD42供应商 更新时间2026-1-30 14:02:00