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MJD3055G

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

Complementary Power Transistors DPAK For Surface Mount Applications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:托盘 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 60V 10A DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJE3055

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJE3055

GeneralPurposeandSwitchingApplications

GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGain-BandwidthProduct:fT=2MHz(Min.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE3055

NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

SamsungSamsung semiconductor

三星三星半导体

MJE3055

SILICONEPITAXIALPLANARTRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose

WINGSWing Shing Computer Components

永盛电子永盛电子(香港)有限公司

产品属性

  • 产品编号:

    MJD3055G

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    托盘

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    8V @ 3.3A,10A

  • 电流 - 集电极截止(最大值):

    50µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    20 @ 4A,4V

  • 频率 - 跃迁:

    2MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 描述:

    TRANS NPN 60V 10A DPAK

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
DPAK
20000
只做原厂渠道 可追溯货源
询价
ON
23+
DPAK
7750
全新原装优势
询价
ON
24+
DPAK4LEADSingleG
8866
询价
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
询价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
ONS
2018+
26976
代理原装现货/特价热卖!
询价
ON Semiconductor
2022+
91
全新原装 货期两周
询价
ONS
08+
DPAK
20000
普通
询价
ON/安森美
24+
TO-252
9600
原装现货,优势供应,支持实单!
询价
ON/安森美
23+
TO-252
50000
全新原装正品现货,支持订货
询价
更多MJD3055G供应商 更新时间2025-6-17 16:36:00