High Voltage Power Transistors

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ONSEMI

安森美半导体

High Voltage Power Transistors

文件：93.23 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：托盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 300V 0.5A DPAK

ONSEMI

安森美半导体

High Voltage Power Transistors

High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix)

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Fairchild

仙童半导体

0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS

Plastic Medium Power NPN Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc • Ex

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Motorola

摩托罗拉

COMPLEMETARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LI

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STMICROELECTRONICS

意法半导体