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MJD45H11T4

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

文件:192.88 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MJD45H11T4

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

文件:192.88 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MJD45H11T4

Complementary power transistors

文件:217.1 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

MJD45H11T4

Complementary Power Transistors

文件:76.24 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MJD45H11T4

Low voltage PNP power transistor

These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications. • Low collector-emitter saturation voltage \n• Fast switching speed;

ST

意法半导体

MJD45H11T4

Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 80V 8A DPAK

STMICROELECTRONICS

意法半导体

MJD45H11T4-A

Complementary power transistors

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

文件:215.43 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

MJD45H11T4G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

文件:132.18 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

MJD45H11T4G

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

文件:310.51 Kbytes 页数:11 Pages

ONSEMI

安森美半导体

MJD45H11T4G

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

文件:192.88 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

产品属性

  • 产品编号:

    MJD45H11T4

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1V @ 400mA,8A

  • 电流 - 集电极截止(最大值):

    10µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    40 @ 4A,1V

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 描述:

    TRANS PNP 80V 8A DPAK

供应商型号品牌批号封装库存备注价格
ST
24+
TO252
8950
BOM配单专家,发货快,价格低
询价
ST(意法半导体)
24+
TO-252
2669
原厂订货渠道,支持BOM配单一站式服务
询价
ST/意法
25+
TO-252
32000
ST/意法全新特价MJD45H11T4即刻询购立享优惠#长期有货
询价
ON
14+
TO-252
9860
大量原装进口现货,一手货源,一站式服务,可开17%增
询价
ON
23+
TO-252
26551
进口原装正品,绝无虚假,价格优惠
询价
ST
SOT252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
STM
22+
2500
TO-252-3 (DPAK)
询价
ST/意法半导体
22+
TO-252-3
6000
原装正品现货 可开增值税发票
询价
ST/意法
22+
S
10000
原装正品
询价
ST专家
2021+
DPAK
6800
原厂原装,欢迎咨询
询价
更多MJD45H11T4供应商 更新时间2025-10-13 11:06:00