10 Amp NPN Silicon Power Transistors 125W

Features • High Collector-Emitter Voltage VCES=400V • DC Current Gain Specified 3.5A • High Frequency Response to 2.5 MHz

文件：108.72 Kbytes 页数：2 Pages

MCC

10 AMPERE POWER TRANSISTORS NPN SILICON

High-Voltage NPN Silicon Transistors . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz

文件：134 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min.) • DC Current Gain- : hFE= 20-80@ IC= 0.5A APPLICATIONS • Designed for medium to high voltage inverters, converters, regulators and switching circuits.

文件：71.45 Kbytes 页数：2 Pages

ISC

无锡固电

10 Amp NPN Silicon Power Transistors 125W

Features • High Collector-Emitter Voltage VCEs=400V • DC Current Gain Specified 3.5A • High Frequency Response to 2.5MHz

文件：83.74 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage APPLICATIONS • Designed for medium-to-high voltage Inverters,converters,regulators and switching circuits

文件：110.16 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：111.74 Kbytes 页数：3 Pages

SAVANTIC

125W NPN High Power BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron