丝印：MJD3055XXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES Designed for General Purpose Amplifier da nLow Speed Switching Applications Electrically Simiar to MJE3055 DC Current Gain Specified to10 Amperes

文件：2.49044 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier an d Low Speed Switching Applications   ● Electrically Simiar to MJE3055 ● DC Current Gain Specified to 10A

文件：1.45845 Mbytes 页数：3 Pages

JIANGSU

长电科技

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4)

文件：91.77 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ -I “ Suffix) • Electrically Similar to Popular MJE3055T • DC Current Gain Specified to 10A • High Current Gain -

文件：44.86 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Complementary Power Transistors

MJD2955 (PNP) MJD3055 (NPN) SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Strai

文件：147.11 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A • Complement to Type MJD2955 • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

文件：265.67 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：279.65 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：298.71 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：298.71 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：279.65 Kbytes 页数：2 Pages

ISC

无锡固电