MI-P200-IYA说明书PDF资料批发供应第6页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
MJD200	文件：45.78 Kbytes Page：5 Pages	D-PAKforSurfaceMountApplications D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
MJD200	文件：236.97 Kbytes Page：6 Pages	SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS MJD200NPN MJD210PNP NPN/PNPSiliconDPAKForSurfaceMountApplications ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=25Vdc(Min)@IC=10mAdc	MotorolaMotorola, Inc 摩托罗拉	Motorola
MJD200	文件：236.97 Kbytes Page：6 Pages	ComplementaryPlasticPowerTransistors ComplementaryPlasticPowerTransistors NPN/PNPSiliconDPAKForSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage−VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain−hFE	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200	文件：87.9 Kbytes Page：6 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200	文件：138.05 Kbytes Page：6 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200	文件：152.01 Kbytes Page：7 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200G	文件：152.01 Kbytes Page：7 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200G	文件：87.9 Kbytes Page：6 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200G	文件：138.05 Kbytes Page：6 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200RL	文件：87.9 Kbytes Page：6 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200RLG	文件：87.9 Kbytes Page：6 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200RLG	文件：138.05 Kbytes Page：6 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD200RLG	文件：152.01 Kbytes Page：7 Pages	ComplementaryPlasticPowerTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJE200	文件：339.37 Kbytes Page：2 Pages	COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications.	CentralCentral Semiconductor Corp 美国中央半导体	Central
MJE200	文件：811.73 Kbytes Page：6 Pages	SiliconNPNtransistorinaTO-126FPlasticPackage. Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features Lowcollector-emittersaturationvoltage,highcurrentgainbandwidthproduct,ComplementtoMJE210. Applications Designedforgeneralaudioamplifierapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
MJE200	文件：120.99 Kbytes Page：6 Pages	ComplementarySiliconPowerPlasticTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJE200	文件：242.53 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor DESCRIPTION •LowCollector–EmitterSaturationVoltage- •DCCurrentGain-BandwidthProduct •HighDCCurrentGain •ComplementtoMJE210 APPLICATIONS •Designedforlowvoltage,low-power,high-gainaudioamplifierapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MJE200	文件：255.72 Kbytes Page：6 Pages	POWERTRANSISTORSCOMPLEMENTARYSILICON ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features •Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain-hFE=70(Min)@IC=500mAdc	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJE200	文件：255.72 Kbytes Page：6 Pages	5AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON25VOLTS15WATTS ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High	MotorolaMotorola, Inc 摩托罗拉	Motorola
MJE200	文件：42.12 Kbytes Page：4 Pages	NPNEpitaxialSiliconTransistor Feature •LowCollector-EmitterSaturationVoltage •HighCurrentGainBandwidthProduct:fT=65MHz@IC=100mA(Min.) •ComplementtoMJE210	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
MI-P200-IYA
制造商：
VICOR
制造商全称：
Vicor Corporation
功能描述：
Military Chassis Mount DC-DC Converters 10 to 300W Single, Dual, Triple Outputs

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	MIP20121R0MBE	INPAQ	23+	SMD	311	原装正品--可开增值税发票量大可订货	询价
深圳市粤骏腾电子科技有限公司	MIP20121R0MBE	INPAQ/佳邦	23+	SMD	1200	全新原装数量均有多电话咨询	询价
中天科工半导体（深圳）有限公司	MIP20121R0MBE	INPAQ	20+	SMD	56200	原装优势主营型号-可开原型号增税票	询价
深圳市中利达电子科技有限公司	MIP20121R0MBE	INPAQ/佳邦	22+	SMD	1000000	电感只做原装现货提供一站式配套供货中利达	询价
中科航电（深圳）电子集团有限公司	MIP20121R0MBE	INPAQ/佳邦		N/A	90000	公司集团化配单-有更多数量-免费送样-原包装正品现货-	询价
深圳市华来深电子有限公司	MIP20121R0MBE	INPAQ	23+	SMD	8650	受权代理!全新原装现货特价热卖!	询价
深圳市明嘉莱科技有限公司	MIP20121R0MBE	INPAQ/佳邦	17+PBF	SMD	880000	明嘉莱只做原装正品现货	询价
深圳市惊羽科技有限公司	MIP20121R0MBE	INPAQ-佳邦	24+25+/26+27+	车规-被动器件	96800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市辰德隆电子科技有限公司	MIP20121R0MBE半导体材料	INPAQ/佳邦	23+	SMD	6000	BOM配单--可开发票16%一回收工厂库存	询价
深圳市正川电子有限公司	MIP20122R2MBE	INPAQ	15+	0805	1436	现货-ROHO	询价

更多MI-P200-IYA供应商更新时间2024-5-22 13:00:00

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