Silicon MOS IC

■ Features ● 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip ● 5V and 3 - 5W output with 24VDC input (Flyback method) ■ Applications ● IPD for DC/DC converter

文件：33.1 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon MOS IC

■ ● 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip\n● 5V and 3 - 5W output with 24VDC input (Flyback method)■ Applications\n● IPD for DC/DC converter;

Panasonic

松下

PIN GRID ARRAY CERAMIC 301 PIN CAVITY DOWN

文件：55.55 Kbytes 页数：1 Pages

NSC

国半

Schottky Barrier Diode

Schottky Barrier Diode Sourced from Process GD

文件：195.79 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

SURFACE MOUNT SCHOTTKY DIODE

VOLTAGE 30 Volts POWER 200mWatts FEATURES • Low Capacitance : 1.5pF(Max)at VR=15V • Very Low VF : 0.36V (Typ) at IF = 1mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA

文件：53.39 Kbytes 页数：4 Pages

PANJIT

強茂