Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：56.38 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity pr

文件：71.23 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Surface Mount Schottky Power Rectifier

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：184.62 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：56.38 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：63.3 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：184.62 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Low Forward Voltage • Schottky Barrier Rectifier • Guard Ring Protection • 150 °C Junction Temperature • VRRM 40 to 50 Volts

文件：94.36 Kbytes 页数：2 Pages

MICROSEMI

美高森美

SCHOTTKY RECTIFIER

Description The MBRS140TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives,switching power supplies, converters, free-wheeling diodes, battery charging, and reverse ba

文件：131.49 Kbytes 页数：7 Pages

IRF

SCHOTTKY RECTIFIER

Description The MBRS140TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives,switching power supplies, converters, free-wheeling diodes, battery charging, and reverse ba

文件：131.49 Kbytes 页数：7 Pages

IRF

Schottky Rectifier, 1.0 A

IF(AV) 1.0 A VR 40 V DESCRIPTION The VS-MBRS140TRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, batter

文件：92.96 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司