Schottky Power Rectifier

Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage,

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安森美半导体

Schottky Power Rectifier Surface Mount Power Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：278.42 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SCHOTTKY RECTIFIER

IF(AV) = 1.0 Amp VR = 30V Description The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives,switching power supplies, converters, free-wheeling diodes,battery char

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IRF

Schottky Rectifier, 1.0 A

FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified for industrial level

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VISHAYVishay Siliconix

威世威世科技公司

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Underwriters Laboratory Flammability Class 94V-0 • Schottky Barrier Rectifier • Guard ring protection • Low forward voltage • Low thermal resistance rating

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MICROSEMI

美高森美

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency re

文件：68.28 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency re

文件：68.28 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Surface Mount hottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency re

文件：97.07 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：218.46 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：218.46 Kbytes 页数：5 Pages

ONSEMI

安森美半导体