| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MBRS130T3 | Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency re 文件：68.28 Kbytes 页数：3 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MBRS130T3 | 1 Amp Schottky Rectifier 1 Amp Schottky Rectifier • Underwriters Laboratory Flammability Class 94V-0 • Schottky Barrier Rectifier • Guard ring protection • Low forward voltage • Low thermal resistance rating 文件：120.34 Kbytes 页数：3 Pages | Microsemi 美高森美 | Microsemi | |
MBRS130T3 | 1 Amp Schottky Rectifier | Microchip 微芯科技 | Microchip | |
MBRS130T3 | Package：DO-214AA，SMB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 1A SMB | ONSEMI 安森美半导体 | ONSEMI | |
Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency re 文件：68.28 Kbytes 页数：3 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount hottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency re 文件：97.07 Kbytes 页数：3 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：218.46 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：218.46 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Package：DO-214AA，SMB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 1A SMB | ONSEMI 安森美半导体 | ONSEMI | ||
Package：DO-214AA，SMB；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY | ONSEMI 安森美半导体 | ONSEMI |
产品属性
- 产品编号：
MBRS130T3
- 制造商：
onsemi
- 类别：
分立半导体产品 > 二极管 - 整流器 - 单
- 包装：
卷带（TR）
- 二极管类型：
肖特基
- 电流 - 平均整流 (Io)：
1A
- 速度：
快速恢复 =< 500ns，> 200mA（Io）
- 安装类型：
表面贴装型
- 封装/外壳：
DO-214AA，SMB
- 供应商器件封装：
SMB
- 工作温度 - 结：
-65°C ~ 125°C
- 描述：
DIODE SCHOTTKY 30V 1A SMB
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
12048 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
ON/安森美 |
25+ |
SMB |
32360 |
ON/安森美全新特价MBRS130T3即刻询购立享优惠#长期有货 |
询价 | ||
ON |
21+ |
DO-214AA |
850000 |
全新原装鄙视假货 |
询价 | ||
ON/安森美 |
2019+ |
DO214A |
36000 |
原盒原包装 可BOM配套 |
询价 | ||
ON |
24+ |
SMB |
3750 |
询价 | |||
ON(安森美) |
23+ |
DO-214AA,SMB |
14117 |
公司只做原装正品,假一赔十 |
询价 | ||
ON(安森美) |
2511 |
DO-214AA,SMB |
5000 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
询价 | ||
ON |
25+ |
TO-220 |
18000 |
原厂直接发货进口原装 |
询价 | ||
MOT |
06+ |
原厂原装 |
50051 |
只做全新原装真实现货供应 |
询价 | ||
ON |
23+ |
SMB |
4200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 |
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