Surface Mount Schottky Power Rectifier

文件：61.84 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：146.29 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

肖特基功率整流器，表面贴装，2.0 A，60 V，SMB 封装

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling d • Compact Package with J–Bend Leads Ideal for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Guardring for Over–Voltage Protection\n• Low Forward Voltage DropMechanical Characteristics:\n• Case: Molded Epoxy\n• Epoxy Meets UL94, VO at 1/8 inch\n• Weight: 95 mg (approximately)\n• Ca;

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 2A SMB

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metalïtoïsilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and p

文件：267.71 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metalïtoïsilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and p

文件：267.71 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：146.29 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：61.84 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：146.29 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：107.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体