Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency re

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安森美半导体

Surface Mount hottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency re

文件：97.07 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：218.46 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：218.46 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 1A SMB

ONSEMI

安森美半导体