SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：536.39 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K15；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.13 Kbytes 页数：3 Pages

SY

顺烨电子

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：536.38 Kbytes 页数：3 Pages

SHUNYE

顺烨电子

15.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/

文件：74.63 Kbytes 页数：2 Pages

TSC

台湾半导体

15.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/

文件：74.63 Kbytes 页数：2 Pages

TSC

台湾半导体

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

文件：150.3 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

文件：150.3 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

文件：150.3 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

15.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/

文件：74.63 Kbytes 页数：2 Pages

TSC

台湾半导体

15.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/

文件：74.63 Kbytes 页数：2 Pages

TSC

台湾半导体