Schottky Power Rectifiers employ the use of the Schottky Barrier

principle in a large area metal−to−silicon power diode.

State−of−the−art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for low voltage,

high frequency rectification, or as free wheeling and polarity

protection diodes in surface mount applications where compact size

and weight are critical to the system.

Features

• Small Compact Surface Mountable Package with J−Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

(0.55 V Max @ 1.0 A, TJ = 25°C)

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guardring for Stress Protection

• ESD Ratings:

♦ Human Body Model = 3B (> 8000 V)

♦ Machine Model = C (> 400 V)

• SBRS8 Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These are Pb−Free Devices

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Cathode Polarity Band