Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：56.38 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity pr

文件：71.23 Kbytes 页数：4 Pages

Motorola

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 40 VOLTS

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity prot

恩XP

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：56.38 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：63.3 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：184.62 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：184.62 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface MountSchottky Power Rectifier

文件：104.99 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SMB

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY

ONSEMI

安森美半导体