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LX5506E

InGaP HBT 4 - 6GHz Power Amplifier

The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on

文件:326 Kbytes 页数:7 Pages

MICROSEMI

美高森美

LX5506E-LQ

InGaP HBT 4 - 6GHz Power Amplifier

The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on

文件:326 Kbytes 页数:7 Pages

MICROSEMI

美高森美

LX5506ELQ

Legacy Power Management

Key Features:Advanced InGaP HBT4.9-5.85GHz OperationSingle-Polarity 3.3V SupplyTotal Current ~ 200mA for Pout=19dBm at 5.25GHzP1dB > +26dBm Power Gain ~ 23dB at 5.25GHz & Pout=19dBmEVM ~ 3% for 64QAM/ 54Mbps & Pout=19dBmIntegrated Power DetectorsOn-Chip Input MatchSimple Output MatchMinimal Exte

Microchip

微芯科技

NDL5506P

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

文件:75.42 Kbytes 页数:8 Pages

NEC

瑞萨

NDL5506P

1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件:68.5 Kbytes 页数:8 Pages

NEC

瑞萨

NDL5506PS

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件:66.75 Kbytes 页数:8 Pages

NEC

瑞萨

详细参数

  • 型号:

    LX5506E

  • 制造商:

    MICROSEMI

  • 制造商全称:

    Microsemi Corporation

  • 功能描述:

    InGaP HBT 4 ?6GHz Power Amplifier

供应商型号品牌批号封装库存备注价格
Microsemi
24+
QFN
46
询价
MICROSEMI
2016+
QFN16
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
Microsemi
25+
QFN
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MICROSE
23+
QFN16
8650
受权代理!全新原装现货特价热卖!
询价
MICROSEMI
25+
QFN16
30000
代理全新原装现货,价格优势
询价
原厂
25+
IC
1
普通
询价
MICROSEMI/美高森美
23+
QFN16
50000
全新原装正品现货,支持订货
询价
Microsemi
25+
QFN
3200
全新原装、诚信经营、公司现货销售!
询价
MICROSEMI
04+
QFN16
752
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
MICROSEMI
23+
QFN16
752
全新原装正品现货,支持订货
询价
更多LX5506E供应商 更新时间2026-7-27 15:30:00