LX5506ELQ数据手册Microchip中文资料规格书

描述 Description

Key Features:Advanced InGaP HBT4.9-5.85GHz OperationSingle-Polarity 3.3V SupplyTotal Current ~ 200mA for Pout=19dBm at 5.25GHzP1dB > +26dBm Power Gain ~ 23dB at 5.25GHz & Pout=19dBmEVM ~ 3% for 64QAM/ 54Mbps & Pout=19dBmIntegrated Power DetectorsOn-Chip Input MatchSimple Output MatchMinimal External ComponentsSmall Footprint: 3x3mm2Low Profile: 0.9mmDescription:The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It also has an integrated differential output power detector pair to help reduce BOM cost and PCB board space for system implementation.LX5506E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506E an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications.