LX5506ELQ

Legacy Power Management;

Key Features:Advanced InGaP HBT4.9-5.85GHz OperationSingle-Polarity 3.3V SupplyTotal Current ~ 200mA for Pout=19dBm at 5.25GHzP1dB > +26dBm Power Gain ~ 23dB at 5.25GHz & Pout=19dBmEVM ~ 3% for 64QAM/ 54Mbps & Pout=19dBmIntegrated Power DetectorsOn-Chip Input MatchSimple Output MatchMinimal External ComponentsSmall Footprint: 3x3mm2Low Profile: 0.9mmDescription:The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It also has an integrated differential output power detector pair to help reduce BOM cost and PCB board space for system implementation.LX5506E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506E an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications.

LX5506M

InGaPHBT4.5-6GHzPowerAmplifier

DESCRIPTION TheLX5506MisapoweramplifieroptimizedfortheFCCUnlicensedNationalInformationInfrastructure(U-NII)band,HyperLAN2,andJapan’sWLANapplicationsinthe4.9-5.9GHzfrequencyrange.ThePAisimplementedasathree-stagemonolithicmicrowaveintegratedcircuit(MMIC)with

LX5506M

InGaPHBT4.5??6GHzPowerAmplifier

LX5506MLQ

InGaPHBT4.5??6GHzPowerAmplifier

LX5506MLQ-TR

InGaPHBT4.5??6GHzPowerAmplifier

NDL5506P

1000to1600nmOPTICALFIBERCOMMUNICATIONS80mmInGaAsPINPHOTODIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NDL5506P

1300nmOPTICALANALOGCATVSYSTEM80mmInGaAsPINPHOTODIODEMODULEWITHSMF

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NDL5506P

1000to1600nmOPTICALFIBERCOMMUNICATIONS30mmInGaAsAVALANCHEPHOTODIODEMODULE

DESCRIPTION NDL5531PSeriesisanInGaAsavalanchephotodiodemodulewithsinglemodefiber.Itisdesignedfordetectorsoflongwavelengthtransmissionsystems.Theseriescoversthewavelengthrangebetween1000and1600nm. FEATURES •SmalldarkcurrentID=5nA •Smallterminalcapaci

NDL5506P

1000to1600nmOPTICALFIBERCOMMUNICATIONS50mmInGaAsAVALANCHEPHOTODIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NDL5506P

1000to1600nmOPTICALFIBERCOMMUNICATIONS50mmInGaAsPINPHOTODIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN