InGaP HBT 4.5 ??6GHz Power Amplifier

文件：74.13 Kbytes 页数：2 Pages

Microsemi

美高森美

InGaP HBT 4.5 ??6GHz Power Amplifier

文件：74.13 Kbytes 页数：2 Pages

Microsemi

美高森美

WLAN Power Amplifiers (PA)

The LX5506M is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.9GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip ·Broadband 4.9-5.9GHz Operation\n·Advanced InGaP HBT\n·Single-Polarity 3.3V Supply\n·Power Gain ~ 30dB at 5.25GHz\n·Power Gain > ~28dB Across 4.9-5.9GHz\n·EVM ~ -30dB at Pout=+17dBm at 5.25GHz\n·EVM ~ -30dB at Pout=+18dBm at 5.85GHz\n·Total Current ~140mA for Pout = +17dBm at 5.25GHz (For High Du;

Microchip

微芯科技

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：66.75 Kbytes 页数：8 Pages

NEC

瑞萨

1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：68.5 Kbytes 页数：8 Pages

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

文件：75.42 Kbytes 页数：8 Pages

NEC

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