LX5503LQ数据手册Microchip中文资料规格书

描述 Description

For new designs consider the LX5530LQ.The LX5503 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band and HiperLAN2 applications in the 5.15-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with +25dBm of P1dB and 22dB power gain between 5.15-5.35GHz and 18dB gain up to 5.85GHz. For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very low EVM (Error-Vector Magnitude) of 4%, and consumes less than 200mA total DC current.The LX5503 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5503 an ideal solution for broadband, medium-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications.

特性 Features

·Advanced InGaP HBT
·5.15-5.85GHz Operation
·Single-Polarity 3.3V Supply
·Low Quiescent Current Icq ~100mA
·P1dB ~ +25dBm across 5.15~5.85GHz
·Power Gain ~ 22dB at 5.25GHz & Pout=18dBm
·Power Gain ~ 18dB at 5.85GHz & Pout=18dBm
·Total Current < 200mA for Pout=18dBm EVM ~ 4% for 64QAM/ 54Mbps & Pout=18dBm
·Excellent Temperature Performance
·Simple Input/Output Match
·Minimal External Components
·Small Footprint: 3x3mm2
·Low Profile: 0.9mm
  ROHS, PB Free