WLAN Power Amplifiers (PA)

The LX5516 is a power amplifier module optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50ohm impedance matched at both input and output. The device is manufactured wit ·Advanced InGaP HBT\n·2.4-2.5GHz Operation\n·Single-Polarity 3.3V Supply\n·Quiescent Current ~80mA\n·Power Gain ~ 29 dB\n·Pout=~+18dBm for 2.5% EVM OFDM 64QAM/54Mbps\n·Total Current ~130mA for Pout= +18dBm\n·50ohm Input/Output Matching\n·On-chip Output Power Detector\n·Small Footprint: 2x2mm2\n·;

Microchip

微芯科技

InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module

DESCRIPTION The LX5516 is a power amplifier module optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50 Ω impedance matched at both input and output. The device is m

文件：118.64 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Package：12-XFQFN 裸露焊盘；包装：卷带（TR）剪切带（CT） 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP 802.11B/G/N 2.4GHZ 12MLPQ

MICROSEMI

美高森美

Compact modular design with DIN rail mounting

文件：440.88 Kbytes 页数：29 Pages

EATON

伊顿

PHOTO DIODE

f 80 mm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC

文件：185.14 Kbytes 页数：10 Pages

RENESAS

瑞萨

PHOTO DIODE

f 80 mm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC

文件：185.14 Kbytes 页数：10 Pages

RENESAS

瑞萨