LX5516LL数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

The LX5516 is a power amplifier module optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50ohm impedance matched at both input and output. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V, it delivers 29dB power gain between 2.4-2.5GHz, at a low quiescent current of 80mA. For 18dBm OFDM output power (64QAM, 54Mbps), the PAM provides a low EVM (Error-Vector Magnitude) of 2.5%, and consumes 130mA total DC current. The LX5516 is available in a 12-pin 2x2mm micro-lead package (MLPQ-12L). The compact footprint, ultra low profile, and thermal capability of the MLP package make the LX5516 an ideal solution for high-gain power amplifier requirements for IEEE802.11b/g/n applications.

特性 Features

·Advanced InGaP HBT
·2.4-2.5GHz Operation
·Single-Polarity 3.3V Supply
·Quiescent Current ~80mA
·Power Gain ~ 29 dB
·Pout=~+18dBm for 2.5% EVM OFDM 64QAM/54Mbps
·Total Current ~130mA for Pout= +18dBm
·50ohm Input/Output Matching
·On-chip Output Power Detector
·Small Footprint: 2x2mm2
·Ultra Low Profile:0.46mm
  ROHS, PB Free