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LX5506MLQ中文资料WLAN Power Amplifiers (PA)数据手册Microchip规格书

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厂商型号

LX5506MLQ

功能描述

WLAN Power Amplifiers (PA)

制造商

Microchip Microchip Technology

中文名称

微芯科技 美国微芯科技公司

数据手册

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更新时间

2025-9-26 17:30:00

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LX5506MLQ规格书详情

描述 Description

The LX5506M is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.9GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output prematching. The device is manufactured with an InGaP/GaAs Hetero-junction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3.3V (nominal), with up to +22dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of -30dB for up to +18dBm output power in the 4.9-5.9GHz band. LX5506M features high gain of up to 30dB with low quiescent current of 90mA, and high power added efficiency of up to 20% at maximum linear output power for OFDM mask compliance. It also features an on-chip output power detector to help reduce BOM cost and board space in system implementation. The on-chip detector allows simple interface with an external directional coupler, providing accurate output power level readings insensitive to frequency, temperature, and load VSWR. LX5506M is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes LX5506M an ideal solution for broadband, high-gain power amplifier requirements for IEEE802.11a, and Hiperlan2 portable WLAN applications.

特性 Features

·Broadband 4.9-5.9GHz Operation
·Advanced InGaP HBT
·Single-Polarity 3.3V Supply
·Power Gain ~ 30dB at 5.25GHz
·Power Gain > ~28dB Across 4.9-5.9GHz
·EVM ~ -30dB at Pout=+17dBm at 5.25GHz
·EVM ~ -30dB at Pout=+18dBm at 5.85GHz
·Total Current ~140mA for Pout = +17dBm at 5.25GHz (For High Duty Cycle of 90%)
·Maximum Linear Power ~ +22dBm for OFDM Mask Compliance
·Maximum Linear Efficiency ~ 20%
·On-chip Output Power Detector with Improved Frequency and Load-VSWR Insensitivity
·On-Chip Input Match
·On-Chip RF Decoupling
·Simple Output Match for Optimal Broadband EVM
·Small Footprint: 3x3mm2
·Low Profile: 0.9mm
  ROHS, PB Free

技术参数

  • 型号:

    LX5506MLQ

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    WIRELESS LAN POWER AMPLIFIER - Bulk

供应商 型号 品牌 批号 封装 库存 备注 价格
MICROSEMI
23+
350
专做原装正品,假一罚百!
询价
MICROSEMI
19+
MLPQ16
20000
3100
询价
MSC
25+
QFN
2679
原装优势!绝对公司现货!可长期供货!
询价
MICROSEMI/美高森美
24+
QFN
9624
郑重承诺只做原装进口现货
询价
MICROSEMI
23+
QFP
12800
正规渠道,只有原装!
询价
MICROSEMI/美高森美
25+
MLPQ16
860000
明嘉莱只做原装正品现货
询价
INTERSIL
23+
SOP16
5000
原装正品,假一罚十
询价
MICROSEMI
24+
350
询价
Microsemi Corporation
22+
9000
原厂渠道,现货配单
询价
MICROSEMI/美高森美
23+
QFN
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价