LX5506MLQ中文资料WLAN Power Amplifiers (PA)数据手册Microchip规格书
LX5506MLQ规格书详情
描述 Description
The LX5506M is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.9GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output prematching. The device is manufactured with an InGaP/GaAs Hetero-junction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3.3V (nominal), with up to +22dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of -30dB for up to +18dBm output power in the 4.9-5.9GHz band. LX5506M features high gain of up to 30dB with low quiescent current of 90mA, and high power added efficiency of up to 20% at maximum linear output power for OFDM mask compliance. It also features an on-chip output power detector to help reduce BOM cost and board space in system implementation. The on-chip detector allows simple interface with an external directional coupler, providing accurate output power level readings insensitive to frequency, temperature, and load VSWR. LX5506M is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes LX5506M an ideal solution for broadband, high-gain power amplifier requirements for IEEE802.11a, and Hiperlan2 portable WLAN applications.
特性 Features
·Broadband 4.9-5.9GHz Operation
·Advanced InGaP HBT
·Single-Polarity 3.3V Supply
·Power Gain ~ 30dB at 5.25GHz
·Power Gain > ~28dB Across 4.9-5.9GHz
·EVM ~ -30dB at Pout=+17dBm at 5.25GHz
·EVM ~ -30dB at Pout=+18dBm at 5.85GHz
·Total Current ~140mA for Pout = +17dBm at 5.25GHz (For High Duty Cycle of 90%)
·Maximum Linear Power ~ +22dBm for OFDM Mask Compliance
·Maximum Linear Efficiency ~ 20%
·On-chip Output Power Detector with Improved Frequency and Load-VSWR Insensitivity
·On-Chip Input Match
·On-Chip RF Decoupling
·Simple Output Match for Optimal Broadband EVM
·Small Footprint: 3x3mm2
·Low Profile: 0.9mm
ROHS, PB Free
技术参数
- 型号:
LX5506MLQ
- 制造商:
Microsemi Corporation
- 功能描述:
WIRELESS LAN POWER AMPLIFIER - Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICROSEMI |
23+ |
350 |
专做原装正品,假一罚百! |
询价 | |||
MICROSEMI |
19+ |
MLPQ16 |
20000 |
3100 |
询价 | ||
MSC |
25+ |
QFN |
2679 |
原装优势!绝对公司现货!可长期供货! |
询价 | ||
MICROSEMI/美高森美 |
24+ |
QFN |
9624 |
郑重承诺只做原装进口现货 |
询价 | ||
MICROSEMI |
23+ |
QFP |
12800 |
正规渠道,只有原装! |
询价 | ||
MICROSEMI/美高森美 |
25+ |
MLPQ16 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
INTERSIL |
23+ |
SOP16 |
5000 |
原装正品,假一罚十 |
询价 | ||
MICROSEMI |
24+ |
350 |
询价 | ||||
Microsemi Corporation |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
MICROSEMI/美高森美 |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 |