InGaAs - E-Mode pHEMT Low Noise Amplifier

DESCRIPTION The LX5560 is a low noise amplifier (LNA) for WLAN applications in the 4.9-6.0 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process. It operates with a single positive voltage supply of 3.3V, with noise figure(NF) of 1.7dB

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Microsemi

美高森美

WLAN Linear Amplifiers (LNA)

The LX5560 is a low noise amplifier (LNA) for WLAN applications in the 4.9-6.0 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process. It operates with a single positive voltage supply of 3.3V, with noise figure(NF) of 1.7dB while maintaini

Microchip

微芯科技

包装：带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP 802.11A WIMAX 4.9GHZ-6GHZ

Microchip

微芯科技

Package：12-XFQFN 裸露焊盘；包装：散装 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP 4.9GHZ-6GHZ 12QFN

Microchip

微芯科技

Package：12-XFQFN 裸露焊盘；包装：散装 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP 4.9GHZ-6GHZ 12QFN

Microchip

微芯科技