InGaAs - E-Mode pHEMT Low Noise Amplifier

DESCRIPTION The LX5561 is a low noise amplifier (LNA) for WLAN applications in the 2.4-2.5 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process. It operates with a single positive voltage supply of 3.3V, with noise figure of 1.5dB whi

文件：187.11 Kbytes 页数：8 Pages

Microsemi

美高森美

2.4GHz LNA, 3.3V, 2x2x0.5mm

The LX5561 is a low noise amplifier (LNA) for WLAN applications in the 2.4-2.5 GHz frequency range. The LNA is implemented with bias circuit and input/output matching circuit on chip, resulting in simple external circuit on board. In addition, the onchip bias circuit provides stable performance of g 0.5µm InGaAs E-mode pHEMT\n2.4 – 2.5GHz Operation\nSingle 3.3V Supply\nGain ~ 13.0dB\nNoise Figure ~ 1.5dB\nInput IP3 ~ +6.5dBm\nInput P1dB ~ +2.5dBm\nOn-Chip Bias Circuit\nOn-Chip Input/Output Match\n2mm x 2mm MLPQ-12L\nLow Profile 0.5mm;

Microchip

微芯科技

InGaAs - E-Mode pHEMT Low Noise Amplifier

DESCRIPTION The LX5561 is a low noise amplifier (LNA) for WLAN applications in the 2.4-2.5 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process. It operates with a single positive voltage supply of 3.3V, with noise figure of 1.5dB whi

文件：187.11 Kbytes 页数：8 Pages

Microsemi

美高森美

包装：带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP 802.11B/G 2.4GHZ

Microchip

微芯科技

Package：12-XFQFN 裸露焊盘；包装：盒 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP

Microchip

微芯科技