InGaP HBT 2.3 - 2.5 GHz Power Amplifier

DESCRIPTION The LX5514 is a power amplifier optimized for WLAN applications in the 2.3 – 2.5GHz frequency range. The power amplifier is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The device is manufactured with an InGaP

文件：92.15 Kbytes 页数：2 Pages

Microsemi

美高森美

InGaP HBT 2.3 - 2.5 GHz Power Amplifier

DESCRIPTION The LX5514 is a power amplifier optimized for WLAN applications in the 2.3 – 2.5GHz frequency range. The power amplifier is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The device is manufactured with an InGaP

文件：92.15 Kbytes 页数：2 Pages

Microsemi

美高森美

WLAN Power Amplifiers (PA)

The LX5514 is a power amplifier optimized for WLAN applications in the 2.3 – 2.5GHz frequency range. The power amplifier is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. ·Advanced InGaP HBT\n·2.3 – 2.5GHz Operation\n·Single-Polarity 3.3V Supply\n·Quiescent Current 80mA\n·Power Gain 28dB\n·Total Current 150mA for POUT=20dBm OFDM EVM ~3 % 54Mbps / 64QAM\n·Small Footprint: 2 x 2mm2\n·Low Profile: 0.46mm\n  ROHS, PB Free;

Microchip

微芯科技

WLAN Power Amplifiers (PA)

The LX5514M is a power amplifier optimized for WLAN(802.11b/g/n) applications in the 2.4-2.5 GHz frequency range with active bias, on-chip input matching, and output pre-matching. It operates with a single positive voltage supply of 3.3V, and provides power gain of 27dB and output powers of 19dBm at ·Advanced InGaP HBT\n·2.4-2.5GHz Operation\n·Single-Polarity 3.3V Supply\n·Quiescent Current ~ 84mA\n·Power Gain ~ 27dB\n·19dBm @3% EVM/3.3V\n·Total Ic ~ 130mA @19dBm/3.3V\n·Complete On-Chip Input Match\n·Simple Output Match\n·Small Footprint: 1.5x1.5mm2\n·Low Profile: 0.4mm\n  ROHS, P;

Microchip

微芯科技