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型号	下载订购	功能描述	制造商上传企业	LOGO
LM2103DR.A	文件：1.15722 Mbytes Page：29 Pages	丝印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte 文件：1.15722 Mbytes 页数：29 Pages	TI 德州仪器	TI
LM2104	文件：1.10613 Mbytes Page：28 Pages	LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte 文件：1.10613 Mbytes 页数：28 Pages	TI 德州仪器	TI
LM2104	文件：1.13851 Mbytes Page：28 Pages	LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte 文件：1.13851 Mbytes 页数：28 Pages	TI 德州仪器	TI
LM2104DR	文件：1.13851 Mbytes Page：28 Pages	丝印：L2104D；Package：SOIC；LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte 文件：1.13851 Mbytes 页数：28 Pages	TI 德州仪器	TI
LM2104DR	文件：1.10613 Mbytes Page：28 Pages	丝印：L2104D；Package：SOIC；LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte 文件：1.10613 Mbytes 页数：28 Pages	TI 德州仪器	TI
LM2104DR.A	文件：1.10613 Mbytes Page：28 Pages	丝印：L2104D；Package：SOIC；LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte 文件：1.10613 Mbytes 页数：28 Pages	TI 德州仪器	TI
LM2105	文件：2.26393 Mbytes Page：32 Pages	LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current 文件：2.26393 Mbytes 页数：32 Pages	TI 德州仪器	TI
LM2105	文件：1.38329 Mbytes Page：25 Pages	LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr 文件：1.38329 Mbytes 页数：25 Pages	TI 德州仪器	TI
LM2105	文件：1.21212 Mbytes Page：28 Pages	LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr 文件：1.21212 Mbytes 页数：28 Pages	TI 德州仪器	TI
LM2105_V01	文件：1.21212 Mbytes Page：28 Pages	LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr 文件：1.21212 Mbytes 页数：28 Pages	TI 德州仪器	TI

技术参数

Power switch：
IGBT
Input VCC (min) (V)：
9
Input VCC (max) (V)：
18
Peak output current (A)：
0.65
Operating temperature range (°C)：
-40 to 125
Undervoltage lockout (typ) (V)：
8
Rating：
Catalog
Fall time (ns)：
18
Iq (mA)：
0.0333
Input threshold：
CMOS
Channel input logic：
Inverting
Negative voltage handling at HS pin (V)：
-1
Features：
Dead time control
Driver configuration：
Single input
封装：
SOIC (D)
引脚：
8
尺寸：
29.4 mm² 4.9 x 6

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福田区绿盛电子商行	LM210H	NSC	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市恒创达实业有限公司	LM210J	NS	17+	DIP	6200	100%原装正品现货	询价
深圳市益百分电子有限公司	LM210N	NS	DIP8	94+	16	全新原装进口自己库存优势	询价
深圳市凌旭科技有限公司	LM210N	NSC	2016+	DIP8	2787	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市富诚威科技有限公司	LM210P	NSC	25+	DIP-8	4650		询价
深圳市利加科技有限公司	LM210N	NSC	16+	DIP8	8000	原装现货请来电咨询	询价
深圳市一线半导体有限公司	LM210J	NS	24+	CDIP	380		询价
深圳市毅创腾电子科技有限公司	LM210J	NS		DIP	1200	正品原装--自家现货-实单可谈	询价
深圳市卓越微芯电子有限公司	LM210SH/883	NS	25+	CAN	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
上海专毅电子科技有限公司	LM210N	NS	17+	DIP8	9988	只做原装进口,自己库存	询价

更多LM210供应商更新时间2025-10-13 16:03:00

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