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LM2105DR

Marking:LM2105;Package:SOIC;LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

LM2105DR

Marking:LM2105;Package:SOIC;LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州仪器美国德州仪器公司

PLM2105DR

Marking:LM2105;Package:SOIC;LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

PLM2105DSGR

Marking:LM2105;Package:WSON;LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

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