丝印：LM2105；Package：SOIC；LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr

文件：1.21212 Mbytes 页数：28 Pages

TI

德州仪器

丝印：LM2105；Package：SOIC；LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26393 Mbytes 页数：32 Pages

TI

德州仪器

丝印：LM2105；Package：SOIC；LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr

文件：1.38329 Mbytes 页数：25 Pages

TI

德州仪器

丝印：LM2105；Package：WSON；LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr

文件：1.38329 Mbytes 页数：25 Pages

TI

德州仪器

丝印：LM2105；Package：SOIC；LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr

文件：1.21212 Mbytes 页数：28 Pages

TI

德州仪器

丝印：LM2105；Package：SOIC；LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26393 Mbytes 页数：32 Pages

TI

德州仪器

丝印：L105；Package：WSON；LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26393 Mbytes 页数：32 Pages

TI

德州仪器

LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr

文件：1.38329 Mbytes 页数：25 Pages

TI

德州仪器

LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr

文件：1.21212 Mbytes 页数：28 Pages

TI

德州仪器

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26393 Mbytes 页数：32 Pages

TI

德州仪器