LM2105DR中文资料德州仪器数据手册PDF规格书

1 Features

• Drives two N-channel MOSFETs in half-bridge

configuration

• Integrated bootstrap diode

• 5-V typical undervoltage lockout on GVDD

• 105-V maximum recommended voltage on BST

• –19.5-V absolute maximum negative transient

voltage handling on SH

• 0.5-A/0.8-A peak source/sink currents

• 115-ns typical propagation delay

2 Applications

• Brushless-DC (BLDC) motors

• Permanent magnet synchronous motors (PMSM)

• Cordless vacuum cleaners

• Cordless garden and power tools

• E-bikes and e-scooters

• Battery test equipment

• Offline uninterruptible power supply (UPS)

• General-purpose MOSFET or IGBT driver

3 Description

The LM2105 is a compact, high-voltage gate driver

designed to drive both the high-side and the lowside

N-channel MOSFETs in a synchronous buck or

a half-bridge configuration. The integrated bootstrap

diode saves board space and reduces system cost by

eliminating the need for an external discrete diode.

The –1-V DC and –19.5-V transient negative

voltage handling on the SH pin improve the system

robustness in high noise applications. The small,

thermally-enhanced 8-pin WSON package improves

PCB layout by allowing the driver to be placed closer

to the motor phases. The LM2105 is also available

in an 8-pin SOIC package compatible with industry

standard pinouts. Undervoltage lockout (UVLO) is

provided on both the low-side and the high-side power

rails for protection during power up and power down.