零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
LM210 | Low Profile Miniature Single Phase Surface Mount Bridge Rectifiers | Good-Ark Good-Ark | ||
LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •115-nstypicalpropagatio | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •115-nstypicalpropagatio | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •115-nstypicalpropagatio | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | |||
LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | |||
LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent | TITexas Instruments 德州仪器美国德州仪器公司 | |||
LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent | TITexas Instruments 德州仪器美国德州仪器公司 | |||
Low Profile Miniature Single Phase Surface Mount Bridge Rectifiers Reverse Voltage 1000V Output Current 2.0A | Good-Ark Good-Ark | |||
N-ChannelEnhancement Mode Field Effect Transistor | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
Voltage Follower | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
Voltage Follower | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 |
详细参数
- 型号:
LM210
- 制造商:
Sliger Designs, Inc.
- 功能描述:
FOR THE PROTO CHASSIS - Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NSC |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
NS |
17+ |
DIP |
6200 |
100%原装正品现货 |
询价 | ||
NS |
DIP8 |
94+ |
16 |
全新原装进口自己库存优势 |
询价 | ||
NSC |
13+ |
DIP8 |
9500 |
特价热销现货库存 |
询价 | ||
NSC |
2016+ |
DIP8 |
2787 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
NSC |
22+ |
DIP-8 |
4650 |
询价 | |||
NSC |
16+ |
DIP8 |
8000 |
原装现货请来电咨询 |
询价 | ||
NS |
2016+ |
CAN8 |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
NS |
CDIP |
380 |
询价 | ||||
NS |
DIP |
1200 |
正品原装--自家现货-实单可谈 |
询价 |
相关规格书
更多- LM210-A
- LM210D
- LM210J
- LM210P
- LM211/B
- LM211_05
- LM211D
- LM211DE4
- LM211DG4
- LM211DR2
- LM211DRE4
- LM211DT
- LM211H
- LM211MDREP
- LM211N,602
- LM211PE4
- LM211PWE4
- LM211PWR
- LM211PWRG4
- LM211QD
- LM211QDR
- LM211QDRG4
- LM211QDRQ1
- LM21212-1
- LM21212-1EVM/NOPB
- LM21212-2EVM
- LM21212AMH-1/NOPB
- LM21212AMHX-1/NOPB
- LM21212MH-2
- LM21212MHE-1/NOPB
- LM21212MHX-1/NOPB
- LM21215
- LM21215A
- LM21215AMH-1/NOPB
- LM21215AMHE1NOPB
- LM21215EVM/NOPB
- LM21215MH/NOPB
- LM212D
- LM212JG
- LM212P
- LM21305_11
- LM21305EVM/NOPB
- LM21305SQ/NOPB
- LM21305SQE/NOPB
- LM21305SQX/NOPB
相关库存
更多- LM210-A-113
- LM210H
- LM210JG
- LM211
- LM211/D
- LM2111N
- LM211DB
- LM211DG
- LM211DR
- LM211DR2G
- LM211DRG4
- LM211DT-CUT TAPE
- LM211J-8
- LM211N
- LM211P
- LM211PW
- LM211PWG4
- LM211PWRE4
- LM211-Q1
- LM211QDG4
- LM211QDREP
- LM211QDRG4Q1
- LM212
- LM21212-1EVM
- LM21212-2
- LM21212-2EVM/NOPB
- LM21212AMHE-1/NOPB
- LM21212MH-1
- LM21212MH-2/NOPB
- LM21212MHE-2/NOPB
- LM21212MHX-2/NOPB
- LM212-155.52M
- LM21215A-1EVM/NOPB
- LM21215AMHE-1/NOPB
- LM21215AMHX-1/NOPB
- LM21215MH
- LM212B
- LM212H
- LM212L
- LM21305
- LM21305DEMO/NOPB
- LM21305SQ
- LM21305SQE
- LM21305SQX
- LM213-155.52M