Low Profile Miniature Single Phase Surface Mount Bridge Rectifiers

文件：377.81 Kbytes 页数：4 Pages

Good-Ark

固锝电子

丝印：LM2105；Package：SOIC；LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 105-V maximum recommended voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink curr

文件：1.21212 Mbytes 页数：28 Pages

TI

德州仪器

丝印：LM2105；Package：SOIC；LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 5-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26393 Mbytes 页数：32 Pages

TI

德州仪器

LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 115-ns typical propagatio

文件：2.26484 Mbytes 页数：33 Pages

TI

德州仪器

丝印：L2101D；Package：SOIC；LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 115-ns typical propagatio

文件：2.26484 Mbytes 页数：33 Pages

TI

德州仪器

丝印：L101；Package：WSON；LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 115-ns typical propagatio

文件：2.26484 Mbytes 页数：33 Pages

TI

德州仪器

LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.18959 Mbytes 页数：29 Pages

TI

德州仪器

LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.15722 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.15722 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.18959 Mbytes 页数：29 Pages

TI

德州仪器