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LM210

Low Profile Miniature Single Phase Surface Mount Bridge Rectifiers

Good-Ark

Good-Ark

Good-Ark

LM2101

LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •115-nstypicalpropagatio

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2101DR

LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •115-nstypicalpropagatio

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2101DSGR

LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •115-nstypicalpropagatio

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2103

LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1

LM2103DR

LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1

LM2104

LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2104DR

LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2105

LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2105

LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2105

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2105_V01

LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2105_V02

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2105DR

LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2105DR

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM2105DSGR

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州仪器美国德州仪器公司

TI

LM210_15

Low Profile Miniature Single Phase Surface Mount Bridge Rectifiers Reverse Voltage 1000V Output Current 2.0A

Good-Ark

Good-Ark

Good-Ark

LM2102W

N-ChannelEnhancement Mode Field Effect Transistor

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

LM210H

Voltage Follower

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

LM210J

Voltage Follower

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

详细参数

  • 型号:

    LM210

  • 制造商:

    Sliger Designs, Inc.

  • 功能描述:

    FOR THE PROTO CHASSIS - Bulk

供应商型号品牌批号封装库存备注价格
NSC
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
NS
17+
DIP
6200
100%原装正品现货
询价
NS
DIP8
94+
16
全新原装进口自己库存优势
询价
NSC
13+
DIP8
9500
特价热销现货库存
询价
NSC
2016+
DIP8
2787
只做原装,假一罚十,公司可开17%增值税发票!
询价
NSC
22+
DIP-8
4650
询价
NSC
16+
DIP8
8000
原装现货请来电咨询
询价
NS
2016+
CAN8
6528
只做进口原装现货!假一赔十!
询价
NS
CDIP
380
询价
NS
DIP
1200
正品原装--自家现货-实单可谈
询价
更多LM210供应商 更新时间2024-4-27 15:09:00