LM2103DR中文资料德州仪器数据手册PDF规格书

1 Features

• Drives two N-channel MOSFETs in half-bridge

configuration

• 8-V typical undervoltage lockout on GVDD

• 107-V absolute maximum voltage on BST

• –19.5-V absolute maximum negative transient

voltage handling on SH

• 0.5-A/0.8-A peak source/sink currents

• 475-ns typical fixed internal dead-time

• Built-in cross conduction prevention

• 115-ns typical propagation delay

• Inverting input pin INL

2 Applications

• Brushless-DC (BLDC) motors

• Permanent magnet synchronous motors (PMSM)

• Servo and stepper motor drives

• Cordless vacuum cleaners

• Cordless garden and power tools

• E-bikes and e-scooters

• Battery test equipment

• Offline uninterruptible power supply (UPS)

• General-purpose MOSFET or IGBT driver

3 Description

The LM2103 is a compact, high-voltage gate driver

designed to drive both the high-side and the low-side

N-channel MOSFETs in a synchronous buck or a halfbridge

configuration. The INL inverting input allows

the driver to be used in either dual or single PWM

input applications.

The fixed dead-time and the –1-V DC and –19.5-

V transient negative voltage handling on the SH

pin improve the system robustness in high noise

applications. The LM2103 is available in an 8-pin

SOIC package compatible with industry standard

pinouts. Undervoltage lockout (UVLO) is provided on

both the low-side and the high-side power rails for

protection during power up and power down.