LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.18959 Mbytes 页数：29 Pages

TI

德州仪器

LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.15722 Mbytes 页数：29 Pages

TI

德州仪器

具有 8V UVLO、死区时间和反相输入引脚的 107V、0.5A/0.8A 半桥栅极驱动器。

LM2103 是一款紧凑型高压栅极驱动器，专为驱动采用同步降压或半桥配置的高侧和低侧 N 沟道 MOSFET 而设计。 INL 反相输入允许在双路或单路 PWM 输入应用中使用驱动器。\n\nSH 引脚具有 固定死区时间以及 –1V 直流和 –19.5V 瞬态负电压处理能力，可提升高噪声应用中的系统稳健性。 LM2103 采用与业界通用引脚排列兼容的 8 引脚 SOIC 封装。在低侧和高侧电源轨上均提供欠压锁定 (UVLO) 功能，以在上电和断电期间提供保护。 • 可驱动两个采用半桥配置的 N 沟道 MOSFET\n• BST 上的最大绝对电压为 107V\n• 0.5A/0.8A 峰值拉电流/灌电流\n• 内置跨导保护\n• 反相输入引脚 INL;

TI

德州仪器

丝印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.15722 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.18959 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.15722 Mbytes 页数：29 Pages

TI

德州仪器