LM2103

LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte

LM2103DR

Marking：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •8-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrents •475-nstypicalfixedinte

LPA2103

EMI??W

LPC2103

Single-chip16-bit/32-bitmicrocontrollers;8kB/16kB/32kBflashwithISP/IAP,fastportsand10-bitADC

Generaldescription TheLPC2101/2102/2103microcontrollersarebasedona16-bit/32-bitARM7TDMI-SCPUwithreal-timeemulationthatcombinesthemicrocontrollerwith8kB,16kBor32kBofembeddedhigh-speedflashmemory.A128-bitwidememoryinterfaceandauniqueacceleratorarchitecture

LTCEC-2103-RSLASHQ

PowerTransducerSeriesLT-UNIT

LV2103

UHFHYPERABRUPTTUNINGDIODES

UHFHYPERABRUPTTUNINGDIODES •Applicationfrequenciesupto800MHz •Lineartuningcapabilitybetween3and8volts •Diodecapacitancerangesfrom10.5to31pFsupporthigherapplicationfrequencies

LV2103A

UHFHYPERABRUPTTUNINGDIODES

UHFHYPERABRUPTTUNINGDIODES •Applicationfrequenciesupto800MHz •Lineartuningcapabilitybetween3and8volts •Diodecapacitancerangesfrom10.5to31pFsupporthigherapplicationfrequencies

MD2103

3Wmonoaudiopoweramplifier

MD2103DFH

HighvoltageNPNpowertransistorforstandarddefinitionCRTdisplay

Description TheMD2103DFHismanufacturedusingDiffusedCollectorinPlanartechnologyadoptingnewandenhancedhighvoltagestructure. ThenewMDproductseriesshowimprovedsiliconefficiencybrigingupdatedperformancetothehorizontaldeflectionstage. Generalfeatures ■State-of-the-a

MD2103DFP

HighvoltageNPNpowertransistorforstandarddefinitionCRTdisplay

Description TheMD2103DFPismanufacturedusingdiffusedcollectorinplanartechnologyadoptingnewandenhancedhighvoltagestructure.ThenewMDproductseriesshowimprovedsiliconefficiencybrigingupdatedperformancetothehorizontaldeflectionstage. Features ■State-of-the-arttechno