LM2104DR中文资料德州仪器数据手册PDF规格书

1 Features

• Drives two N-channel MOSFETs in half-bridge

configuration

• 8-V typical undervoltage lockout on GVDD

• 107-V absolute maximum voltage on BST

• –19.5-V absolute maximum negative transient

voltage handling on SH

• 0.5-A/0.8-A peak source/sink currents

• 475-ns typical fixed internal dead-time

• Built-in cross conduction prevention

• 115-ns typical propagation delay

• Shutdown logic input pin SD

• Single input pin IN

2 Applications

• Brushless-DC (BLDC) motors

• Permanent magnet synchronous motors (PMSM)

• Servo and stepper motor drives

• Cordless vacuum cleaners

• Cordless garden and power tools

• E-bikes and e-scooters

• Battery test equipment

• Offline uninterruptible power supply (UPS)

• General-purpose MOSFET or IGBT driver

3 Description

The LM2104 is a compact, high-voltage gate driver

designed to drive both the high-side and the low-side

N-channel MOSFETs in a synchronous buck or a halfbridge

configuration. The IN pin allows the device to

be used in single PWM input applications, and the SD

pin allows the controller to disable the driver's outputs

by turning them off when the SD pin is low, regardless

of the IN pin state.

The fixed dead-time and the –1-V DC and –19.5-

V transient negative voltage handling on the SH

pin improve the system robustness in high noise

applications. The LM2104 is available in an 8-pin

SOIC package compatible with industry standard

pinouts. Undervoltage lockout (UVLO) is provided on

both the low-side and the high-side power rails for

protection during power up and power down.